Resonant-Cavity Light-Emitting Diodes Operating at 655 nm with a High External Quantum Efficiency and Light Power

M. Saarinen, V. Vilokkinen, M. Dumitrescu, M. Pessa

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Translated title of the contribution	Resonant-Cavity Light-Emitting Diodes Operating at 655 nm with a High External Quantum Efficiency and Light Power
Original language	English
Pages (from-to)	10-12
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	1
Publication status	Published - 2001
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Resonant-Cavity Light-Emitting Diodes Operating at 655 nm with a High External Quantum Efficiency and Light Power",

author = "M. Saarinen and V. Vilokkinen and M. Dumitrescu and M. Pessa",

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journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - Resonant-Cavity Light-Emitting Diodes Operating at 655 nm with a High External Quantum Efficiency and Light Power

AU - Saarinen, M.

AU - Vilokkinen, V.

AU - Dumitrescu, M.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2001

Y1 - 2001

M3 - Article

SN - 1041-1135

VL - 13

SP - 10

EP - 12

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

ER -