Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers

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Translated title of the contribution	Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
Original language	English
Pages (from-to)	209-212
Journal	Journal of Crystal Growth
Volume	127
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

Publication forum classification

@article{7e5273325d894b5c8a2b7c99b2f95d2f,

title = "Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers",

author = "G. Zhang and A. Ovctchinnikov and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "127",

pages = "209--212",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}