Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

E. I. Moiseev; M. V. Maximov; A. M. Nadtochiy; N. V. Kryzhanovskaya; D. A. Sannikov; T. Yagafarov; M. Kulagina; T. Niemi; R. Isoaho; M. Guina; A. E. Zhukov

doi:10.1088/1742-6596/1124/8/081048

Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

E. I. Moiseev, M. V. Maximov, A. M. Nadtochiy, N. V. Kryzhanovskaya, D. A. Sannikov, T. Yagafarov, M. Kulagina, T. Niemi, R. Isoaho, M. Guina, A. E. Zhukov

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

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Abstract

Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.

Original language	English
Title of host publication	5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures
Subtitle of host publication	2–5 April 2018, Saint Petersburg, Russian Federation
Volume	1124
Edition	8
DOIs	https://doi.org/10.1088/1742-6596/1124/8/081048
Publication status	Published - 2018
Publication type	A4 Article in conference proceedings
Event	International School and Conference "Saint Petersburg OPEN": Optoelectronics, Photonics, Engineering and Nanostructures - Duration: 2 Apr 2018 → 5 Apr 2018

Publication series

Name	Journal of Physics: Conference Series
Publisher	IOP Publishing
ISSN (Print)	1742-6588

Conference

Conference	International School and Conference "Saint Petersburg OPEN": Optoelectronics, Photonics, Engineering and Nanostructures
Period	2/04/18 → 5/04/18

Publication forum classification

Publication forum level 1

ASJC Scopus subject areas

General Physics and Astronomy

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Moiseev_2018_J._Phys.__Conf._Ser._1124_081048
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Moiseev, E. I., Maximov, M. V., Nadtochiy, A. M., Kryzhanovskaya, N. V., Sannikov, D. A., Yagafarov, T., Kulagina, M., Niemi, T., Isoaho, R., Guina, M., & Zhukov, A. E. (2018). Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region. In 5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures: 2–5 April 2018, Saint Petersburg, Russian Federation (8 ed., Vol. 1124). (Journal of Physics: Conference Series). https://doi.org/10.1088/1742-6596/1124/8/081048

Moiseev, E. I. ; Maximov, M. V. ; Nadtochiy, A. M. et al. / Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region. 5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures: 2–5 April 2018, Saint Petersburg, Russian Federation. Vol. 1124 8. ed. 2018. (Journal of Physics: Conference Series).

@inproceedings{5e80310a557b4edf9da699c95d0ea2b1,

title = "Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region",

abstract = "Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.",

author = "Moiseev, {E. I.} and Maximov, {M. V.} and Nadtochiy, {A. M.} and Kryzhanovskaya, {N. V.} and Sannikov, {D. A.} and T. Yagafarov and M. Kulagina and T. Niemi and R. Isoaho and M. Guina and Zhukov, {A. E.}",

note = "jufoid=71018; International School and Conference {"}Saint Petersburg OPEN{"}: Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 02-04-2018 Through 05-04-2018",

year = "2018",

doi = "10.1088/1742-6596/1124/8/081048",

language = "English",

volume = "1124",

series = "Journal of Physics: Conference Series",

publisher = "IOP Publishing",

booktitle = "5th International School and Conference {"}Saint Petersburg OPEN 2018{"}: Optoelectronics, Photonics, Engineering and Nanostructures",

edition = "8",

}

Moiseev, EI, Maximov, MV, Nadtochiy, AM, Kryzhanovskaya, NV, Sannikov, DA, Yagafarov, T, Kulagina, M, Niemi, T , Isoaho, R , Guina, M & Zhukov, AE 2018, Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region. in 5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures: 2–5 April 2018, Saint Petersburg, Russian Federation. 8 edn, vol. 1124, Journal of Physics: Conference Series, International School and Conference "Saint Petersburg OPEN": Optoelectronics, Photonics, Engineering and Nanostructures, 2/04/18. https://doi.org/10.1088/1742-6596/1124/8/081048

Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region. / Moiseev, E. I.; Maximov, M. V.; Nadtochiy, A. M. et al.
5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures: 2–5 April 2018, Saint Petersburg, Russian Federation. Vol. 1124 8. ed. 2018. (Journal of Physics: Conference Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

AU - Moiseev, E. I.

AU - Maximov, M. V.

AU - Nadtochiy, A. M.

AU - Kryzhanovskaya, N. V.

AU - Sannikov, D. A.

AU - Yagafarov, T.

AU - Kulagina, M.

AU - Niemi, T.

AU - Isoaho, R.

AU - Guina, M.

AU - Zhukov, A. E.

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PY - 2018

Y1 - 2018

N2 - Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.

AB - Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.

U2 - 10.1088/1742-6596/1124/8/081048

DO - 10.1088/1742-6596/1124/8/081048

M3 - Conference contribution

AN - SCOPUS:85060973359

VL - 1124

T3 - Journal of Physics: Conference Series

BT - 5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures

T2 - International School and Conference "Saint Petersburg OPEN": Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 2 April 2018 through 5 April 2018

ER -

Moiseev EI, Maximov MV, Nadtochiy AM, Kryzhanovskaya NV, Sannikov DA, Yagafarov T et al. Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region. In 5th International School and Conference "Saint Petersburg OPEN 2018": Optoelectronics, Photonics, Engineering and Nanostructures: 2–5 April 2018, Saint Petersburg, Russian Federation. 8 ed. Vol. 1124. 2018. (Journal of Physics: Conference Series). doi: 10.1088/1742-6596/1124/8/081048

Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

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