Selecting the Right Growth-Plane within GaN Crystal for InGaN-based Yellow-Green or Yellow Lasers by Simulations

    Research output: Other conference contributionAbstractScientific

    Original languageEnglish
    Publication statusPublished - 2014
    Publication typeNot Eligible
    Event14th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices -
    Duration: 1 Sep 20144 Sep 2014

    Conference

    Conference14th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices
    Period1/09/144/09/14

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