Semiconductor saturable absorbers with recovery time controlled through growth conditions

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

6 Citations (Scopus)

Translated title of the contribution	Semiconductor saturable absorbers with recovery time controlled through growth conditions
Original language	English
Title of host publication	Solid State XVI: Technology and Devices, San Jose, CA, USA , 22 January 2007. Proceedings of SPIE
Editors	H.J. Hoffman, R.K. Shori, N. Hodgson
Pages	pp. 645113-1-645113-7
DOIs	https://doi.org/10.1117/12.725397
Publication status	Published - 2007
Publication type	A4 Article in conference proceedings

Publication forum classification

Guina, M., Tuomisto, P., Okhotnikov, O. G., Marcinkevicius, S., Mizohata, K., & Keinonen, J. (2007). Semiconductor saturable absorbers with recovery time controlled through growth conditions. In H. J. Hoffman, R. K. Shori, & N. Hodgson (Eds.), Solid State XVI: Technology and Devices, San Jose, CA, USA , 22 January 2007. Proceedings of SPIE (pp. pp. 645113-1-645113-7) https://doi.org/10.1117/12.725397

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title = "Semiconductor saturable absorbers with recovery time controlled through growth conditions",

author = "M. Guina and P. Tuomisto and O.G. Okhotnikov and S. Marcinkevicius and K. Mizohata and J. Keinonen",

note = "Contribution: organisation=orc,FACT1=1",

year = "2007",

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Guina, M, Tuomisto, P, Okhotnikov, OG, Marcinkevicius, S, Mizohata, K & Keinonen, J 2007, Semiconductor saturable absorbers with recovery time controlled through growth conditions. in HJ Hoffman, RK Shori & N Hodgson (eds), Solid State XVI: Technology and Devices, San Jose, CA, USA , 22 January 2007. Proceedings of SPIE. pp. pp. 645113-1-645113-7. https://doi.org/10.1117/12.725397

Semiconductor saturable absorbers with recovery time controlled through growth conditions. / Guina, M.; Tuomisto, P.; Okhotnikov, O.G. et al.
Solid State XVI: Technology and Devices, San Jose, CA, USA , 22 January 2007. Proceedings of SPIE. ed. / H.J. Hoffman; R.K. Shori; N. Hodgson. 2007. p. pp. 645113-1-645113-7.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Semiconductor saturable absorbers with recovery time controlled through growth conditions

AU - Guina, M.

AU - Tuomisto, P.

AU - Okhotnikov, O.G.

AU - Marcinkevicius, S.

AU - Mizohata, K.

AU - Keinonen, J.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2007

Y1 - 2007

U2 - 10.1117/12.725397

DO - 10.1117/12.725397

M3 - Conference contribution

SP - pp. 645113-1-645113-7

BT - Solid State XVI: Technology and Devices, San Jose, CA, USA , 22 January 2007. Proceedings of SPIE

A2 - Hoffman, H.J.

A2 - Shori, R.K.

A2 - Hodgson, N.

ER -