SiGe Diffusion Barriers for P-doped Si/SiGe Resonant Interband Tunnel Diodes

Niu Jin, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson, Peter H. Chi, David S. Simons

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Si/SiGe resonant interband tunnel diodes (RITD) employing δ-doping spikes of P and B that demonstrate negative differential resistance (NDR) at room temperature are presented. Thin SiGe layers sandwiching the B δ-doping spike used to suppress B out-diffusion are discussed. Three structures were investigated in this study. Structure A, which employed a symmetrical 1 nm Si / 4 nm Si0.6Ge0.4 / 1 nm Si (1/4/1) spacer, showed a peak-to-valley current ratio (PVCR) of 2.7 after 1 minute annealing at 725°C. Structure B with an asymmetrical 0 nm Si / 4 nm Si 0.6Ge0.4 / 2 nm Si (0/4/2) spacer configuration showed a PVCR of 3.2 after 1 minute annealing at 800°C. Structure C, which is the same as Structure B, except that a 1 nm Si0.6Ge0.4 cladding layer was grown below the B δ-layer, further improved PVCR to 3. 6 after 1 minute annealing at 825°C. Results clearly show that, by introducing SiGe layers to clad the B delta-doping layer, the B diffusion is suppressed during the post growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in eliminating defects and results in a lower valley current and higher PVCR.

Original languageEnglish
Title of host publicationProceedings IEEE Lester Eastman Conference on High Performance Devices
Pages265-269
Number of pages5
DOIs
Publication statusPublished - 2002
Externally publishedYes
Publication typeA4 Article in a conference publication
EventIEEE Conference on High Performance Devices - Newark, DE, United States
Duration: 6 Aug 20028 Aug 2002

Conference

ConferenceIEEE Conference on High Performance Devices
Country/TerritoryUnited States
CityNewark, DE
Period6/08/028/08/02

ASJC Scopus subject areas

  • Engineering(all)

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