SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

Z. Xia, E. O. Ristolainen, P. Holloway

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Translated title of the contribution	SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations
Original language	English
Pages (from-to)	2629-2632
Journal	Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena
Volume	16
Issue number	5
Publication status	Published - 1998
Publication type	A1 Journal article-refereed

Publication forum classification

@article{0f63dc812d9a4e199f5467707aa3bd5d,

title = "SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations",

author = "Z. Xia and Ristolainen, {E. O.} and P. Holloway",

note = "Contribution: organisation=ele,FACT1=1",

year = "1998",

language = "English",

volume = "16",

pages = "2629--2632",

journal = "Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena",

number = "5",

}

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

AU - Xia, Z.

AU - Ristolainen, E. O.

AU - Holloway, P.

N1 - Contribution: organisation=ele,FACT1=1

PY - 1998

Y1 - 1998

M3 - Article

VL - 16

SP - 2629

EP - 2632

JO - Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena

JF - Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena

IS - 5

ER -