Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

    Research output: Other conference contributionAbstractScientific

    1 Citation (Scopus)

    Abstract

    A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.
    Original languageEnglish
    DOIs
    Publication statusPublished - 2003
    Publication typeNot Eligible
    EventIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 -
    Duration: 14 Oct 200316 Oct 2003

    Conference

    ConferenceIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003
    Period14/10/0316/10/03

    Fingerprint

    Dive into the research topics of 'Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells'. Together they form a unique fingerprint.

    Cite this