Abstract
A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.
| Original language | English |
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| DOIs | |
| Publication status | Published - 2003 |
| Publication type | Not Eligible |
| Event | IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 - Duration: 14 Oct 2003 → 16 Oct 2003 |
Conference
| Conference | IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 |
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| Period | 14/10/03 → 16/10/03 |
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