Abstract
The first demonstration of a single-active-region vertical-cavity surface-emitting laser (VCSEL) exhibiting dual-wavelength lasing under cryogenic operation is reported. At temperatures below 40 K, and most prominently at 8 K, the device emits at 830 nm and 867 nm from the same electrically pumped InGaAs quantum well active region. Through combined optical modeling, edge-emitting electroluminescence spectroscopy, polarization-resolved measurements, and k\cdot p-band structure analysis, we show that the two lasing wavelengths originate from distinct recombination pathways involving light-hole and heavy-hole transitions, respectively. Remarkably, the two wavelengths correspond to longitudinal cavity modes that are respectively anti-resonant and resonant with the quantum well gain region, demonstrating that conventional standing-wave gain enhancement is not a prerequisite for lasing in cryogenic VCSELs. The observed behavior is enabled by strong spectral broadening and increased radiative efficiency at cryogenic temperatures, which allow higher-order quantum well transitions to contribute significantly to laser gain. These results establish a new operating regime for VCSELs at cryogenic temperatures and open a route toward compact multiwavelength cryogenic VCSEL sources for wavelength-division multiplexed optical links in cryogenic computing and quantum information systems.
| Original language | English |
|---|---|
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 32 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2026 |
| Publication type | A1 Journal article-refereed |
Keywords
- anti-resonant emission
- cryo-VCSEL
- cryogenics
- dual-wavelength
- light-hole emission
- VCSEL
Publication forum classification
- Publication forum level 2
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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