Abstract
We present site-controlled epitaxy of InAs quantum dots (QD) for plasmonics and report QD-plasmon coupling in a hybrid structure consisting of site-controlled InAs/GaAs QD chains in the proximity of an Ag film.
| Original language | English |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics 2016 |
| Subtitle of host publication | QELS_Fundamental Science |
| Publisher | OSA - The Optical Society |
| ISBN (Electronic) | 978-1-943580-11-8 |
| DOIs | |
| Publication status | Published - 2016 |
| Publication type | A4 Article in conference proceedings |
| Event | CONFERENCE ON LASERS AND ELECTRO-OPTICS - Duration: 1 Jan 1900 → … |
Conference
| Conference | CONFERENCE ON LASERS AND ELECTRO-OPTICS |
|---|---|
| Period | 1/01/00 → … |
Keywords
- (250.5403) Plasmonics
- (160.4236) Nanomaterials
- (160.6000) Semiconductor materials
Publication forum classification
- Publication forum level 0
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
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Dive into the research topics of 'Site-controlled InAs Quantum Dots for Plasmonics'. Together they form a unique fingerprint.Activities
- 1 Conference presentation
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Site-controlled InAs Quantum Dots for Plasmonics
Hakkarainen, T. (Speaker)
6 Jun 2016Activity: Talk or presentation › Conference presentation
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