Abstract
We report on the spontaneous formation of lateral composition
modulations (LCMs) in Ga(As, Bi) epilayers grown by low-temperature
(<300 degrees C) molecular beam epitaxy (MBE) on GaAs(001). Both
cross-section and plan-view transmission electron microscopy techniques
are used to investigate the nature of the LCMs, consisting of Bi-rich
cylinder-like nanostructures lying along the [001] growth direction. The
observed LCMs are the consequence of a two-dimensional phase separation
process occurring at the surface of the growing epilayers, and their
columnar nature is consistent with a surface-directed spinodal
decomposition process. Although LCMs are thermodynamically driven, we
show how they can be kinetically controlled, in particular, through the
As/Ga flux ratio and the substrate temperature. This is a result of LCMs
developing from surface atomic diffusion processes, since the atomic
dimer configurations on the surface alter adatom diffusivity. The
significant role of the surface reconstructions is also discussed. (c)
2015 AIP Publishing LLC.
Original language | English |
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Article number | 185302 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 117 |
Issue number | 18 |
DOIs | |
Publication status | Published - 14 May 2015 |
Publication type | A1 Journal article-refereed |
Keywords
- PHASE-SEPARATION
- SEMICONDUCTOR ALLOYS
- GROWTH
- IN1-XGAXASYP1-Y
- DIFFUSION
- EPITAXY
- GAAS
Publication forum classification
- Publication forum level 1
ASJC Scopus subject areas
- General Physics and Astronomy