State-of-the-art inkjet-printed metal-insulator-metal (MIM) capacitors on silicon substrate

Chiara Mariotti; Benjamin S. Cook; Luca Roselli; Manos M. Tentzeris

doi:10.1109/LMWC.2014.2365745

State-of-the-art inkjet-printed metal-insulator-metal (MIM) capacitors on silicon substrate

Chiara Mariotti, Benjamin S. Cook, Luca Roselli, Manos M. Tentzeris

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm² by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.

Original language	English
Article number	6949681
Pages (from-to)	13-15
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2014.2365745
Publication status	Published - 1 Jan 2015
Publication type	A1 Journal article-refereed

Keywords

Inkjet-printing
printed electronics
RF passives
silicon
thin-film capacitors

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2014.2365745

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abstract = "Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm2 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.",

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AB - Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm2 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.

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State-of-the-art inkjet-printed metal-insulator-metal (MIM) capacitors on silicon substrate

Abstract

Keywords

ASJC Scopus subject areas

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