State-of-the-art inkjet-printed metal-insulator-metal (MIM) capacitors on silicon substrate

Chiara Mariotti, Benjamin S. Cook, Luca Roselli, Manos M. Tentzeris

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)


    Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm2 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.

    Original languageEnglish
    Article number6949681
    Pages (from-to)13-15
    Number of pages3
    JournalIEEE Microwave and Wireless Components Letters
    Issue number1
    Publication statusPublished - 1 Jan 2015
    Publication typeA1 Journal article-refereed


    • Inkjet-printing
    • printed electronics
    • RF passives
    • silicon
    • thin-film capacitors

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering


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