Strain-Compensated GaInNAs Structures for 1.3-um Lasers

T. Jouhti, C.S. Peng, E.-M. Pavelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov, M. Pessa

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Translated title of the contribution	Strain-Compensated GaInNAs Structures for 1.3-um Lasers
Original language	English
Pages (from-to)	787-794
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	8
Issue number	4
Publication status	Published - 2002
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Strain-Compensated GaInNAs Structures for 1.3-um Lasers",

author = "T. Jouhti and C.S. Peng and E.-M. Pavelescu and J. Konttinen and L.A. Gomes and O.G. Okhotnikov and M. Pessa",

note = "Invited Paper<br/>Contribution: organisation=orc,FACT1=1",

year = "2002",

language = "English",

volume = "8",

pages = "787--794",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Strain-Compensated GaInNAs Structures for 1.3-um Lasers

AU - Jouhti, T.

AU - Peng, C.S.

AU - Pavelescu, E.-M.

AU - Konttinen, J.

AU - Gomes, L.A.

AU - Okhotnikov, O.G.

AU - Pessa, M.

N1 - Invited Paper<br/>Contribution: organisation=orc,FACT1=1

PY - 2002

Y1 - 2002

M3 - Article

SN - 1077-260X

VL - 8

SP - 787

EP - 794

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 4

ER -