Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

W. Li, J. Turpeinen, P. Melanen, P. Savolainen, P. Uusimaa, M. Pessa

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Translated title of the contribution	Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy
Original language	English
Pages (from-to)	541-544
Journal	Journal of Crystal Growth
Volume	227-228
Publication status	Published - 2001
Publication type	A1 Journal article-refereed

Publication forum classification

@article{38d55f7e5cee4d0db80b93648269f9bc,

title = "Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy",

author = "W. Li and J. Turpeinen and P. Melanen and P. Savolainen and P. Uusimaa and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2001",

language = "English",

volume = "227-228",

pages = "541--544",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

AU - Li, W.

AU - Turpeinen, J.

AU - Melanen, P.

AU - Savolainen, P.

AU - Uusimaa, P.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2001

Y1 - 2001

M3 - Article

SN - 0022-0248

VL - 227-228

SP - 541

EP - 544

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -