Translated title of the contribution | Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy |
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Original language | English |
Pages (from-to) | 541-544 |
Journal | Journal of Crystal Growth |
Volume | 227-228 |
Publication status | Published - 2001 |
Publication type | A1 Journal article-refereed |
Publication forum classification
- No publication forum level