Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

W. Li, J. Turpeinen, P. Melanen, P. Savolainen, P. Uusimaa, M. Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)
    Translated title of the contributionStrain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy
    Original languageEnglish
    Pages (from-to)541-544
    JournalJournal of Crystal Growth
    Volume227-228
    Publication statusPublished - 2001
    Publication typeA1 Journal article-refereed

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