Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy

G. Zhang; A. Ovtchinnikov

Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy

G. Zhang
, A. Ovtchinnikov

Research output: Contribution to journal › Article › Scientific › peer-review

42 Citations (Scopus)

Translated title of the contribution	Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy
Original language	English
Pages (from-to)	1644-1646
Journal	Applied Physics Letters
Volume	62
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

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Cite this

@article{d0587ef798884ad4ac49e3b7c722c566,

title = "Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda\textasciitilde{}0.98 myym) grown by gas-source molecular beam epitaxy",

author = "G. Zhang and A. Ovtchinnikov",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "62",

pages = "1644--1646",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}