Strain engineered SiSiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates

R. Anisha; Niu Jin; Sung Yong Chung; Ronghua Yu; Paul R. Berger; Phillip E. Thompson

doi:10.1063/1.2981211

Strain engineered SiSiGe resonant interband tunneling diodes with outside barriers grown on Si_0.8Ge_0.2 virtual substrates

R. Anisha, Niu Jin, Sung Yong Chung, Ronghua Yu, Paul R. Berger, Phillip E. Thompson

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

Si-based resonant interband tunneling diodes (RITDs) grown on commercially available Si_0.8Ge_0.2 virtual substrates were studied. Peak-to-valley current ratios (PVCRs) were improved by utilizing strain induced band offsets to 3.5 with a peak current density (J_p) of 161 A cm ². More specifically, a tensilely strained Si layer on the p -side and a compressively strained Si_0.5Ge_0.5 layer on the n -side were added to the design to form enhanced potential barriers away from the tunneling junction. The outside barriers deepen the respective hole and electron quantum wells and also block nonresonant tunneling current, which improved the PVCR significantly. However, due to the large surface roughness of the SiGe virtual substrates used in this study, the RITDs grown on Si _0.8Ge_0.2 substrates exhibit a smaller PVCR overall than RITDs optimized on standard Si substrates. Better performance is expected by using higher quality SiGe substrates with smaller surface roughness.

Original language	English
Article number	102113
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2981211
Publication status	Published - 2008
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2981211

Cite this

@article{8fe6a863a35e40bf9041d993716333c8,

title = "Strain engineered SiSiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates",

abstract = "Si-based resonant interband tunneling diodes (RITDs) grown on commercially available Si0.8Ge0.2 virtual substrates were studied. Peak-to-valley current ratios (PVCRs) were improved by utilizing strain induced band offsets to 3.5 with a peak current density (Jp) of 161 A cm 2. More specifically, a tensilely strained Si layer on the p -side and a compressively strained Si0.5Ge0.5 layer on the n -side were added to the design to form enhanced potential barriers away from the tunneling junction. The outside barriers deepen the respective hole and electron quantum wells and also block nonresonant tunneling current, which improved the PVCR significantly. However, due to the large surface roughness of the SiGe virtual substrates used in this study, the RITDs grown on Si 0.8Ge0.2 substrates exhibit a smaller PVCR overall than RITDs optimized on standard Si substrates. Better performance is expected by using higher quality SiGe substrates with smaller surface roughness.",

author = "R. Anisha and Niu Jin and Chung, {Sung Yong} and Ronghua Yu and Berger, {Paul R.} and Thompson, {Phillip E.}",

note = "Funding Information: The Ohio State University was supported by the National Science Foundation (DMR-0103248 and ECS-0323657). The work at NRL was supported by the Office of Naval Research. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2008",

doi = "10.1063/1.2981211",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - Strain engineered SiSiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates

AU - Anisha, R.

AU - Jin, Niu

AU - Chung, Sung Yong

AU - Yu, Ronghua

AU - Berger, Paul R.

AU - Thompson, Phillip E.

N1 - Funding Information: The Ohio State University was supported by the National Science Foundation (DMR-0103248 and ECS-0323657). The work at NRL was supported by the Office of Naval Research. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - Si-based resonant interband tunneling diodes (RITDs) grown on commercially available Si0.8Ge0.2 virtual substrates were studied. Peak-to-valley current ratios (PVCRs) were improved by utilizing strain induced band offsets to 3.5 with a peak current density (Jp) of 161 A cm 2. More specifically, a tensilely strained Si layer on the p -side and a compressively strained Si0.5Ge0.5 layer on the n -side were added to the design to form enhanced potential barriers away from the tunneling junction. The outside barriers deepen the respective hole and electron quantum wells and also block nonresonant tunneling current, which improved the PVCR significantly. However, due to the large surface roughness of the SiGe virtual substrates used in this study, the RITDs grown on Si 0.8Ge0.2 substrates exhibit a smaller PVCR overall than RITDs optimized on standard Si substrates. Better performance is expected by using higher quality SiGe substrates with smaller surface roughness.

AB - Si-based resonant interband tunneling diodes (RITDs) grown on commercially available Si0.8Ge0.2 virtual substrates were studied. Peak-to-valley current ratios (PVCRs) were improved by utilizing strain induced band offsets to 3.5 with a peak current density (Jp) of 161 A cm 2. More specifically, a tensilely strained Si layer on the p -side and a compressively strained Si0.5Ge0.5 layer on the n -side were added to the design to form enhanced potential barriers away from the tunneling junction. The outside barriers deepen the respective hole and electron quantum wells and also block nonresonant tunneling current, which improved the PVCR significantly. However, due to the large surface roughness of the SiGe virtual substrates used in this study, the RITDs grown on Si 0.8Ge0.2 substrates exhibit a smaller PVCR overall than RITDs optimized on standard Si substrates. Better performance is expected by using higher quality SiGe substrates with smaller surface roughness.

U2 - 10.1063/1.2981211

DO - 10.1063/1.2981211

M3 - Article

AN - SCOPUS:51749097966

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102113