@article{a0a1b09b6cec492cbed6edc63afc6444,
title = "Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire",
author = "P. Laukkanen and S. Lehkonen and P. Uusimaa and M. Pessa and J. Oila and S. Hautakangas and K. Saarinen and J. Likonen and J. Ker{\"a}nen",
note = "yhteisjulkaisu orc - mol elm, poistettu tupla r=851<br/>Contribution: organisation=orc,FACT1=0.5<br/>Contribution: organisation=mol elm,FACT2=0.5",
year = "2002",
language = "English",
volume = "92",
pages = "786--792",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "2",
}