Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

Janne Pakarinen

Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

Janne Pakarinen

Research output: Book/Report › Doctoral thesis › Collection of Articles

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Abstract

In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

Translated title of the contribution	Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures
Original language	English
Publisher	Tampere University of Technology
Number of pages	46
ISBN (Electronic)	978-952-15-2264-2
ISBN (Print)	978-952-15-2219-2
Publication status	Published - 25 Sept 2009
Publication type	G5 Doctoral dissertation (articles)

Publication series

Name	Tampere University of Technology. Publication
Publisher	Tampere University of Technology
Volume	830
ISSN (Print)	1459-2045

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http://urn.fi/URN:NBN:fi:tty-200910286986

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AB - In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

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ER -

Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

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