Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy

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Translated title of the contribution	Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy
Original language	English
Pages (from-to)	7592-7593
Journal	Journal of Applied Physics
Volume	87
Issue number	10
Publication status	Published - 2000
Publication type	A1 Journal article-refereed

Publication forum classification

@article{acef8199aed04b8eba9e89ada428f9e3,

title = "Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy",

author = "W. Li and J. Likonen and J. Haapamaa and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2000",

language = "English",

volume = "87",

pages = "7592--7593",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy

AU - Li, W.

AU - Likonen, J.

AU - Haapamaa, J.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2000

Y1 - 2000

M3 - Article

SN - 0021-8979

VL - 87

SP - 7592

EP - 7593

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -