Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers

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Translated title of the contribution	Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers
Original language	English
Pages (from-to)	967-969
Journal	Applied Physics Letters
Volume	62
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

Publication forum classification

@article{4fb4d1d3647e483c9a434374d514c6ed,

title = "Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers",

author = "G. Zhang and A. Ovtchinnikov and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "62",

pages = "967--969",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}