Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Tyler A. Growden, David F. Storm, Evan M. Cornuelle, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Jason A. Roussos, Nicholas Cronk, Laura B. Ruppalt, James G. Champlain, Paul R. Berger, David J. Meyer

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We report the direct measurement of record fast switching speeds in GaN/AlN resonant tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy, displayed three repeatable negative differential resistance (NDR) regions below a bias of +6 V. A room temperature peak-to-valley current ratio (PVCR) > 2 was observed, which represents a marked improvement over recent reports. Measurements carried out on hundreds of devices, of varying sizes, revealed a yield of ∼90%. Repeatability measurements consisting of 3000 sweeps resulted in a standard deviation, relative to the mean, of < 0.1%. Temperature dependent measurements combined with non-equilibrium Green's function based quantum transport simulations suggest the presence of both three-dimensional (3D) and two-dimensional (2D) emitters, giving rise to three NDR regions. Finally, a valley current density vs perimeter-to-area-ratio study indicates the presence of a surface leakage current mechanism, which reduces the PVCR.

Original languageEnglish
Article number113501
Number of pages5
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2020
Publication typeA1 Journal article-refereed

Publication forum classification

  • Publication forum level 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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