Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

L. Rondin; G. Dantelle; A. Slablab; F. Grosshans; F. Treussart; P. Bergonzo; S. Perruchas; T. Gacoin; M. Chaigneau; H. C. Chang; V. Jacques; J. F. Roch

doi:10.1103/PhysRevB.82.115449

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

L. Rondin, G. Dantelle, A. Slablab, F. Grosshans, F. Treussart, P. Bergonzo, S. Perruchas, T. Gacoin, M. Chaigneau, H. C. Chang, V. Jacques, J. F. Roch

Research output: Contribution to journal › Article › Scientific › peer-review

232 Citations (Scopus)

Abstract

We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV^- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV^- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

Original language	English
Article number	115449
Journal	Physical Review B
Volume	82
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.82.115449
Publication status	Published - 28 Sept 2010
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials

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title = "Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds",

abstract = "We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.",

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T1 - Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

AU - Rondin, L.

AU - Dantelle, G.

AU - Slablab, A.

AU - Grosshans, F.

AU - Treussart, F.

AU - Bergonzo, P.

AU - Perruchas, S.

AU - Gacoin, T.

AU - Chaigneau, M.

AU - Chang, H. C.

AU - Jacques, V.

AU - Roch, J. F.

PY - 2010/9/28

Y1 - 2010/9/28

N2 - We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

AB - We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

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DO - 10.1103/PhysRevB.82.115449

M3 - Article

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JO - Physical Review B

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Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

Abstract

ASJC Scopus subject areas

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