Temperature behaviour of resonant cavity light-emitting diodes at 650 nm

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Translated title of the contribution	Temperature behaviour of resonant cavity light-emitting diodes at 650 nm
Original language	English
Pages (from-to)	418-421
Journal	Semiconductor Science and Technology
Volume	15
Publication status	Published - 2000
Publication type	A1 Journal article-refereed

Publication forum classification

@article{7e72757a879a4bb9bfe1b384e2a4cba2,

title = "Temperature behaviour of resonant cavity light-emitting diodes at 650 nm",

author = "P. Sipil{\"a} and M. Saarinen and M. Guina and V. Vilokkinen and M. Toivonen and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2000",

language = "English",

volume = "15",

pages = "418--421",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Temperature behaviour of resonant cavity light-emitting diodes at 650 nm

AU - Sipilä, P.

AU - Saarinen, M.

AU - Guina, M.

AU - Vilokkinen, V.

AU - Toivonen, M.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2000

Y1 - 2000

M3 - Article

SN - 0268-1242

VL - 15

SP - 418

EP - 421

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -