Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes

N. Jin; S. Y. Chung; R. Yu; P. R. Berger; P. E. Thompson

doi:10.1049/el:20050020

Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes

N. Jin, S. Y. Chung, R. Yu, P. R. Berger, P. E. Thompson

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density (J _p) of 22 kA/cm² with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (f_r0) of 2.4 GHz was obtained by biasing the diode at 320 mV Increasing temperature slightly degrades the PVCR and f_r0. At 150°C, the PVCR and f_r0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications.

Original language	English
Pages (from-to)	559-560
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	9
DOIs	https://doi.org/10.1049/el:20050020
Publication status	Published - 28 Apr 2005
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20050020

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title = "Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes",

abstract = "The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density (J p) of 22 kA/cm2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (fr0) of 2.4 GHz was obtained by biasing the diode at 320 mV Increasing temperature slightly degrades the PVCR and fr0. At 150°C, the PVCR and fr0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications.",

author = "N. Jin and Chung, {S. Y.} and R. Yu and Berger, {P. R.} and Thompson, {P. E.}",

year = "2005",

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doi = "10.1049/el:20050020",

language = "English",

volume = "41",

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journal = "Electronics Letters",

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TY - JOUR

T1 - Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes

AU - Jin, N.

AU - Chung, S. Y.

AU - Yu, R.

AU - Berger, P. R.

AU - Thompson, P. E.

PY - 2005/4/28

Y1 - 2005/4/28

N2 - The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density (J p) of 22 kA/cm2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (fr0) of 2.4 GHz was obtained by biasing the diode at 320 mV Increasing temperature slightly degrades the PVCR and fr0. At 150°C, the PVCR and fr0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications.

AB - The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density (J p) of 22 kA/cm2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (fr0) of 2.4 GHz was obtained by biasing the diode at 320 mV Increasing temperature slightly degrades the PVCR and fr0. At 150°C, the PVCR and fr0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications.

U2 - 10.1049/el:20050020

DO - 10.1049/el:20050020

M3 - Article

AN - SCOPUS:18744367261

SN - 0013-5194

VL - 41

SP - 559

EP - 560

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes

Abstract

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