Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)

G. Zhang; A. Ovtchinnikov

Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)

G. Zhang
, A. Ovtchinnikov

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Translated title of the contribution	Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)
Original language	English
Pages (from-to)	3599-3602
Journal	Journal of Applied Physics
Volume	73
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

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Cite this

@article{01084aff7be64b0bab4640d628bdd780,

title = "Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda \textasciitilde{} 980 nm)",

author = "G. Zhang and A. Ovtchinnikov",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "73",

pages = "3599--3602",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)

AU - Zhang, G.

AU - Ovtchinnikov, A.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

SN - 0021-8979

VL - 73

SP - 3599

EP - 3602

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -