The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)

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Translated title of the contribution	The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)
Original language	English
Article number	014306
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of Applied Physics
Volume	111
Issue number	1
DOIs	https://doi.org/10.1063/1.3675271
Publication status	Published - 2012
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)",

author = "Teemu Hakkarainen and Andreas Schramm and Juha Tommila and Mircea Guina",

note = "Contribution: organisation=orc,FACT1=1<br/>Publisher name: American Institute of Physics AIP",

year = "2012",

doi = "10.1063/1.3675271",

language = "English",

volume = "111",

pages = "1--6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)

AU - Hakkarainen, Teemu

AU - Schramm, Andreas

AU - Tommila, Juha

AU - Guina, Mircea

N1 - Contribution: organisation=orc,FACT1=1<br/>Publisher name: American Institute of Physics AIP

PY - 2012

Y1 - 2012

U2 - 10.1063/1.3675271

DO - 10.1063/1.3675271

M3 - Article

SN - 0021-8979

VL - 111

SP - 1

EP - 6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 014306

ER -