The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

K. Tappura, T. Hakkarainen, K. Rakennus, M. Hovinen, M. Pessa

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Translated title of the contribution	The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy
Original language	English
Journal	Journal of Crystal Growth
Volume	112
Issue number	27
Publication status	Published - 1991
Publication type	A1 Journal article-refereed

Publication forum classification

@article{eb07878adf0c4e7f84965d8b628f33e8,

title = "The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy",

author = "K. Tappura and T. Hakkarainen and K. Rakennus and M. Hovinen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1991",

language = "English",

volume = "112",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "27",

}

TY - JOUR

T1 - The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

AU - Tappura, K.

AU - Hakkarainen, T.

AU - Rakennus, K.

AU - Hovinen, M.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1991

Y1 - 1991

M3 - Article

SN - 0022-0248

VL - 112

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 27

ER -