The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes

Paul Berger; J. Pamulapati; R. Lai; G. I. Ng; Y. C. Chen; P. K. Bhattacharya; Jasprit Singh; Dimitris Pavlidis

doi:10.1063/1.347140

The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes

Paul Berger, J. Pamulapati, R. Lai, G. I. Ng, Y. C. Chen, P. K. Bhattacharya, Jasprit Singh, Dimitris Pavlidis

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Journal	Journal of Applied Physics
Volume	68
DOIs	https://doi.org/10.1063/1.347140
Publication status	Published - 1990
Externally published	Yes
Publication type	A1 Journal article-refereed

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10.1063/1.347140

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Berger, P., Pamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Bhattacharya, P. K., Singh, J., & Pavlidis, D. (1990). The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes. Journal of Applied Physics, 68. https://doi.org/10.1063/1.347140

@article{a91cad2cd42d4caa9bc60fa598e76fe1,

title = "The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes",

author = "Paul Berger and J. Pamulapati and R. Lai and Ng, {G. I.} and Chen, {Y. C.} and Bhattacharya, {P. K.} and Jasprit Singh and Dimitris Pavlidis",

year = "1990",

doi = "10.1063/1.347140",

language = "English",

volume = "68",

journal = "Journal of Applied Physics",

issn = "0021-8979",

}

Berger, P, Pamulapati, J, Lai, R, Ng, GI, Chen, YC, Bhattacharya, PK, Singh, J & Pavlidis, D 1990, 'The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes', Journal of Applied Physics, vol. 68. https://doi.org/10.1063/1.347140

The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes. / Berger, Paul; Pamulapati, J.; Lai, R. et al.

In: Journal of Applied Physics, Vol. 68, 1990.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes

AU - Berger, Paul

AU - Pamulapati, J.

AU - Lai, R.

AU - Ng, G. I.

AU - Chen, Y. C.

AU - Bhattacharya, P. K.

AU - Singh, Jasprit

AU - Pavlidis, Dimitris

PY - 1990

Y1 - 1990

U2 - 10.1063/1.347140

DO - 10.1063/1.347140

M3 - Article

SN - 0021-8979

VL - 68

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -