The relation of the performance characteristics of pseudomorphic In_0.53+xGa_0.47-xAs/In_0.52Al_0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes

Paul Berger, J. Pamulapati, R. Lai, G. I. Ng, Y. C. Chen, P. K. Bhattacharya, Jasprit Singh, Dimitris Pavlidis

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalJournal of Applied Physics
Publication statusPublished - 1990
Externally publishedYes
Publication typeA1 Journal article-refereed

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