The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

J.L. Gavartin, A.L. Shluger, A.S. Foster, G.I. Bersuker

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Translated title of the contribution	The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies
Original language	English
Pages (from-to)	13 p
Journal	Journal of Applied Physics
Volume	97
Issue number	5, 053704
DOIs	https://doi.org/10.1063/1.1854210
Publication status	Published - 2005
Externally published	Yes
Publication type	A1 Journal article-refereed

Publication forum classification

@article{68d3768b76c64289b2cf244c6c805872,

title = "The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies",

author = "J.L. Gavartin and A.L. Shluger and A.S. Foster and G.I. Bersuker",

note = "Contribution: organisation=fys,FACT1=1",

year = "2005",

doi = "10.1063/1.1854210",

language = "English",

volume = "97",

pages = "13 p",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5, 053704",

}

TY - JOUR

T1 - The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

AU - Gavartin, J.L.

AU - Shluger, A.L.

AU - Foster, A.S.

AU - Bersuker, G.I.

N1 - Contribution: organisation=fys,FACT1=1

PY - 2005

Y1 - 2005

U2 - 10.1063/1.1854210

DO - 10.1063/1.1854210

M3 - Article

SN - 0021-8979

VL - 97

SP - 13 p

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5, 053704

ER -