Thin-film InAs/GaAs quantum dot solar cell with planar and pyramidal back reflectors

Timo Aho, Farid Elsehrawy, Antti Tukiainen, Sanna Ranta, Marianna Raappana, Riku Isoaho, Arto Aho, Arttu Hietalahti, Federica Cappelluti, Mircea Guina

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
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Abstract

Quantum dot solar cells are promising for next-generation photovoltaics owing to their potential for improved device efficiency related to bandgap tailoring and quantum confinement of charge carriers. Yet implementing effective photon management to increase the absorptivity of the quantum dots is instrumental. To this end, the performance of thin-film InAs/GaAs quantum dot solar cells with planar and structured back reflectors is reported. The experimental thin-film solar cells with planar reflectors exhibited a bandgap-voltage offset of 0.3 V with an open circuit voltage of 0.884 V, which is one of the highest values reported for quantum dot solar cells grown by molecular beam epitaxy to our knowledge. Using measured external quantum efficiency and current-voltage characteristics, we parametrize a simulation model that was used to design an advanced reflector with diffractive pyramidal gratings revealing a 12-fold increase of the photocurrent generation in the quantum dot layers.

Original languageEnglish
Pages (from-to)6304-6308
Number of pages5
JournalApplied Optics
Volume59
Issue number21
DOIs
Publication statusPublished - 14 Jul 2020
Publication typeA1 Journal article-refereed

Publication forum classification

  • Publication forum level 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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