Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation

Tomi Ryynänen; Maria Koivisto; Susanna Narkilahti; Jukka  Lekkala

doi:10.3389/conf.fnins.2016.93.00123

Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation

Tomi Ryynänen, Maria Koivisto, Susanna Narkilahti, Jukka Lekkala

Research output: Other conference contribution › Abstract › Scientific

Abstract

An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.

Original language	English
DOIs	https://doi.org/10.3389/conf.fnins.2016.93.00123
Publication status	Published - 24 Jun 2016
Publication type	Not Eligible
Event	MEA meeting 2016 - Duration: 28 Jun 2016 → 1 Jul 2016 http://www.nmi.de/meameeting/

Conference

Conference	MEA meeting 2016
Period	28/06/16 → 1/07/16
Internet address	http://www.nmi.de/meameeting/

Keywords

microelectrode
Titanium nitride
e-Beam evaporation
Ion beam assisted deposition
MEA

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10.3389/conf.fnins.2016.93.00123

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title = "Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation",

abstract = "An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.",

keywords = "microelectrode, Titanium nitride, e-Beam evaporation, Ion beam assisted deposition, MEA ",

author = "Tomi Ryyn{\"a}nen and Maria Koivisto and Susanna Narkilahti and Jukka Lekkala",

year = "2016",

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doi = "10.3389/conf.fnins.2016.93.00123",

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note = "MEA meeting 2016 ; Conference date: 28-06-2016 Through 01-07-2016",

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T1 - Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation

AU - Ryynänen, Tomi

AU - Koivisto, Maria

AU - Narkilahti, Susanna

AU - Lekkala, Jukka

PY - 2016/6/24

Y1 - 2016/6/24

N2 - An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.

AB - An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.

KW - microelectrode

KW - Titanium nitride

KW - e-Beam evaporation

KW - Ion beam assisted deposition

KW - MEA

U2 - 10.3389/conf.fnins.2016.93.00123

DO - 10.3389/conf.fnins.2016.93.00123

M3 - Abstract

T2 - MEA meeting 2016

Y2 - 28 June 2016 through 1 July 2016

ER -

Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation

Abstract

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