Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Niu Jin; Sung Yong Chung; Roux M. Heyns; Paul R. Berger; Ronghua Yu; Phillip E. Thompson; Sean L. Rommel

doi:10.1109/LED.2004.833845

Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Niu Jin, Sung Yong Chung, Roux M. Heyns, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, Sean L. Rommel

Research output: Contribution to journal › Article › Scientific › peer-review

50 Citations (Scopus)

Abstract

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

Original language	English
Pages (from-to)	646-648
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	9
DOIs	https://doi.org/10.1109/LED.2004.833845
Publication status	Published - 2004
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2004.833845

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title = "Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR",

abstract = "A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.",

author = "Niu Jin and Chung, {Sung Yong} and Heyns, {Roux M.} and Berger, {Paul R.} and Ronghua Yu and Thompson, {Phillip E.} and Rommel, {Sean L.}",

note = "Funding Information: Manuscript received March 1, 2004; revised June 7, 2004. This work was supported in part by the National Science Foundation under Grants ECS-0196208, ECS-0196054, and ECS-0323657, in part by the Office of Naval Research, and in part by The Ohio State University Center for Materials Research. The review of this paper was arranged by Editor E. Sangiorgi. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2004",

doi = "10.1109/LED.2004.833845",

language = "English",

volume = "25",

pages = "646--648",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "9",

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TY - JOUR

T1 - Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

AU - Jin, Niu

AU - Chung, Sung Yong

AU - Heyns, Roux M.

AU - Berger, Paul R.

AU - Yu, Ronghua

AU - Thompson, Phillip E.

AU - Rommel, Sean L.

N1 - Funding Information: Manuscript received March 1, 2004; revised June 7, 2004. This work was supported in part by the National Science Foundation under Grants ECS-0196208, ECS-0196054, and ECS-0323657, in part by the Office of Naval Research, and in part by The Ohio State University Center for Materials Research. The review of this paper was arranged by Editor E. Sangiorgi. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004

Y1 - 2004

N2 - A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

AB - A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

U2 - 10.1109/LED.2004.833845

DO - 10.1109/LED.2004.833845

M3 - Article

AN - SCOPUS:4444341306

SN - 0741-3106

VL - 25

SP - 646

EP - 648

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Abstract

ASJC Scopus subject areas

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