Using Modified Bessel Functions For Calculations of Drain Current Harmonics In a MOS Transistor Operating in Moderate Inversion

Igor Filanovsky, Luis Oliveira, Nikolay Tchamov

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    The paper describes evaluation of drain current harmonics in a MOS transistor operating in moderate inversion and strong saturation. The dependence of the drain current on the gate-source and drain-source voltages is described using a simplified 'reconciliation' model developed by Y. Tsividis. Then, in the proposed model the current components corresponding to the terms depending exponentially on normalized gate-source and/or drain-source modulating sinusoidal voltage are evaluated using modified Bessel functions. This approach allows one to omit the small-signal requirement for modulating signals, and calculate the first, second and third harmonics of the drain current caused by the gate-source or drain-source voltages and also find the intermodulation terms. The results are applied to the design of low-distortion low-voltage amplifiers. The recommendations are confirmed by simulations.
    Original languageEnglish
    Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
    PublisherIEEE
    ISBN (Electronic)9781538648810
    DOIs
    Publication statusPublished - 27 May 2018
    Publication typeA4 Article in conference proceedings
    EventIEEE International Symposium on Circuits and Systems - Florence, Italy
    Duration: 27 May 201830 May 2018

    Publication series

    Name
    ISSN (Electronic)2379-447X

    Conference

    ConferenceIEEE International Symposium on Circuits and Systems
    Country/TerritoryItaly
    CityFlorence
    Period27/05/1830/05/18

    Keywords

    • MOS transistor model, moderate inversion,

    Publication forum classification

    • Publication forum level 1

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