A comparative study on electronic transport properties of n- and p-modulation doped Ga0.68In0.32As/GaAs and dilute nitride Ga0.68In0.32N0.012As0.988/GaAs Quantum well

    Aktiviteetti: Konferenssiesitelmä

    Aikajakso2012
    Tapahtuman otsikkoE-MRS 2012 Spring Meeting, Symposium T: Physics and Applications of Novel gain materials based on Nitrogen and Bismuth Containing III-V Compounds, May 14 - 18, 2012,Strasbourg, France
    Tapahtuman tyyppiConference

    Country of activity

    • Ranska

    Publication forum classification

    • Ei tasoa