Keyphrases
GaInNAsSb
91%
Gallium Arsenide
82%
Solar Cell
74%
Dilute Nitrides
51%
Multijunction Solar Cells
45%
Molecular Beam Epitaxy
36%
Lattice Matching
35%
GaInP
34%
Band Gap
27%
GaInNAs
27%
III-V Solar Cells
26%
GaAs Quantum Well
22%
Back Reflector
20%
High Efficiency
20%
Room Temperature
17%
Microdisk Laser
16%
Active Regions
16%
Metal-organic Chemical Vapor Deposition (MOCVD)
15%
Narrow Gap
15%
Space Solar Cells
14%
Antireflection Coating
14%
Conversion Efficiency
13%
Space Application
13%
Temperature Coefficient
13%
Short-circuit Current Density
12%
Laser-based
12%
InGaAsN
12%
Quantum Dot Sensitized Solar Cell (QDSSC)
11%
Microdisk
11%
Ge Substrate
11%
Triple-junction Solar Cell
10%
Nitride Materials
10%
Hybrid Integration
10%
Triple Junction
10%
GaAs Substrate
10%
Open-circuit Voltage
9%
Single Junction
9%
Three-band
9%
Quantum Dot Lasers
9%
Nanostructured Alumina
9%
Electro-absorption Modulator
9%
Monolithically Integrated
9%
Temperature-dependent Characteristics
9%
Low Band Gap
9%
Data Transmission
9%
GaAs Quantum Dot
9%
Chemical Vapor Deposition Processes
8%
External Quantum Efficiency
8%
Tandem Solar Cells
7%
Room Temperature Lasing
7%
Engineering
Gallium Arsenide
100%
Solar Cell
96%
Band Gap
53%
Multijunction Solar Cell
50%
Dilute Nitride
44%
Junction Solar Cell
25%
Quantum Well
24%
Thin Films
20%
Active Region
18%
Conversion Efficiency
16%
Metal Organic Chemical Vapor Deposition
15%
Temperature Coefficient
15%
Space Solar Cell
14%
Phase Composition
14%
Short-Circuit Current Density
14%
Space Application
12%
Quantum Dot
12%
Back Reflector
12%
Room Temperature
12%
Open Circuit Voltage
12%
External Quantum Efficiency
10%
Nitride Material
10%
Deposition Process
10%
Aluminum Oxide
9%
Reflectance
9%
Silicon Photonics
8%
Gaas Substrate
8%
Waveguide
8%
Back Surface
7%
Aluminium Gallium Arsenide
7%
Passivation
7%
Photovoltaics
6%
Electron-Beam Evaporation
6%
Solar Simulator
6%
Xenon Lamp
6%
Junction Cell
6%
Heterostructures
5%
Charge Carrier
5%
Current-Voltage Characteristic
5%
Bottom Cell
5%
