1180 nm GaInNAs quantum well based high power DBR laser diodes

Jukka Viheriälä; Antti Aho; Heikki Virtanen; Mihail Dumitrescu; Mircea Guina

1180 nm GaInNAs quantum well based high power DBR laser diodes

Jukka Viheriälä, Antti Aho, Heikki Virtanen, Mihail Dumitrescu, Mircea Guina

Tutkimustuotos: Abstrakti › Tieteellinen

1 Sitaatiot (Scopus)

Abstrakti

Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2017
Tapahtuma	SPIE Photonics West 2017 - The Moscone Center, San Francisco, Yhdysvallat Kesto: 28 tammik. 2017 → 2 helmik. 2017

Conference

Conference	SPIE Photonics West 2017
Maa/Alue	Yhdysvallat
Kaupunki	San Francisco
Ajanjakso	28/01/17 → 2/02/17

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Yleinen tekniikka

Siteeraa tätä

@conference{909cfab731244dc49c7d6f4d30af60cb,

title = "1180 nm GaInNAs quantum well based high power DBR laser diodes",

abstract = "Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).",

keywords = "GaInNAs, DBR laser, DBR, SHG, 1180nm, 1178nm, 1154nm",

author = "Jukka Viheri{\"a}l{\"a} and Antti Aho and Heikki Virtanen and Mihail Dumitrescu and Mircea Guina",

year = "2017",

language = "English",

note = "SPIE Photonics West 2017 ; Conference date: 28-01-2017 Through 02-02-2017",

}

TY - CONF

T1 - 1180 nm GaInNAs quantum well based high power DBR laser diodes

AU - Viheriälä, Jukka

AU - Aho, Antti

AU - Virtanen, Heikki

AU - Dumitrescu, Mihail

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).

AB - Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).

KW - GaInNAs

KW - DBR laser

KW - DBR

KW - SHG

KW - 1180nm

KW - 1178nm

KW - 1154nm

M3 - Abstract

T2 - SPIE Photonics West 2017

Y2 - 28 January 2017 through 2 February 2017

ER -

1180 nm GaInNAs quantum well based high power DBR laser diodes

Abstrakti

Conference

!!ASJC Scopus subject areas

Sormenjälki

Siteeraa tätä