@inproceedings{d474de2cf68f43b487ca315d95b57af2,
title = "1180 nm GaInNAs quantum well based high power DBR laser diodes",
abstract = "We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.",
keywords = "DBR laser, dbr, 1180nm, 1178nm, 1154nm, SHG",
author = "Jukka Viheri{\"a}l{\"a} and Antti Aho and Heikki Virtanen and Mervi Koskinen and Mihail Dumitrescu and Mircea Guina",
note = "INT=fot,{"}Koskinen, Mervi{"}; SPIE Photonics West ; Conference date: 01-01-1900",
year = "2017",
month = feb,
day = "24",
doi = "10.1117/12.2251317",
language = "English",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Zediker, {Mark S.}",
booktitle = "High-Power Diode Laser Technology XV",
address = "United States",
}