1180nm VECSEL with 50 W output power

    Tutkimustuotos: KonferenssiartikkeliScientificvertaisarvioitu

    11 Sitaatiot (Scopus)

    Abstrakti

    We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

    AlkuperäiskieliEnglanti
    OtsikkoProceedings of SPIE - The International Society for Optical Engineering
    KustantajaSPIE
    Vuosikerta9349
    ISBN (painettu)9781628414394
    DOI - pysyväislinkit
    TilaJulkaistu - 2015
    OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
    TapahtumaVertical External Cavity Surface Emitting Lasers - , Iso-Britannia
    Kesto: 1 tammik. 2015 → …

    Conference

    ConferenceVertical External Cavity Surface Emitting Lasers
    Maa/AlueIso-Britannia
    Ajanjakso1/01/15 → …

    Julkaisufoorumi-taso

    • Jufo-taso 0

    !!ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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