1180nm VECSEL with 50 W output power

Emmi Kantola; Tomi Leinonen; Sanna Ranta; Miki Tavast; Jussi-Pekka Penttinen; Mircea Guina

doi:10.1117/12.2079480

1180nm VECSEL with 50 W output power

Emmi Kantola, Tomi Leinonen, Sanna Ranta, Miki Tavast, Jussi-Pekka Penttinen, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

15 Sitaatiot (Scopus)

Abstrakti

We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

Alkuperäiskieli	Englanti
Otsikko	Proceedings of SPIE - The International Society for Optical Engineering
Kustantaja	SPIE
Vuosikerta	9349
ISBN (painettu)	9781628414394
DOI - pysyväislinkit	https://doi.org/10.1117/12.2079480
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Vertical External Cavity Surface Emitting Lasers - , Iso-Britannia Kesto: 1 tammik. 2015 → …

Conference

Conference	Vertical External Cavity Surface Emitting Lasers
Maa/Alue	Iso-Britannia
Ajanjakso	1/01/15 → …

Julkaisufoorumi-taso

Jufo-taso 0

!!ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Pääsy asiakirjaan

10.1117/12.2079480

Siteeraa tätä

@inproceedings{0cda25369518488da76a346c2e945b2f,

title = "1180nm VECSEL with 50 W output power",

abstract = "We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.",

keywords = "continuous wave, frequency doubling, heat management, high power, infrared, power scaling, SDL, VECSEL",

author = "Emmi Kantola and Tomi Leinonen and Sanna Ranta and Miki Tavast and Jussi-Pekka Penttinen and Mircea Guina",

year = "2015",

doi = "10.1117/12.2079480",

language = "English",

isbn = "9781628414394",

volume = "9349",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

address = "United States",

note = "Vertical External Cavity Surface Emitting Lasers ; Conference date: 01-01-2015",

}

TY - GEN

T1 - 1180nm VECSEL with 50 W output power

AU - Kantola, Emmi

AU - Leinonen, Tomi

AU - Ranta, Sanna

AU - Tavast, Miki

AU - Penttinen, Jussi-Pekka

AU - Guina, Mircea

PY - 2015

Y1 - 2015

N2 - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

AB - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

KW - continuous wave

KW - frequency doubling

KW - heat management

KW - high power

KW - infrared

KW - power scaling

KW - SDL

KW - VECSEL

U2 - 10.1117/12.2079480

DO - 10.1117/12.2079480

M3 - Conference contribution

AN - SCOPUS:84925666801

SN - 9781628414394

VL - 9349

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - Vertical External Cavity Surface Emitting Lasers

Y2 - 1 January 2015

ER -

1180nm VECSEL with 50 W output power

Abstrakti

Conference

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

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