1.3 μm InAs quantum dot semiconductor disk laser

S. A. Blokhin; M. A. Bobrov; A. A. Blokhin; A. G. Kuzmenkov; A. P. Vasil'Ev; N. A. Maleev; V. V. Dudelev; K. K. Soboleva; G. S. Sokolovskii; A. Rantamäki; O. Okhotnikov; V. M. Ustinov

doi:10.1109/LO.2016.7549727

Abstrakti

Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.

Alkuperäiskieli	Englanti
Sivut	R317
DOI - pysyväislinkit	https://doi.org/10.1109/LO.2016.7549727
Tila	Julkaistu - 23 elok. 2016
Tapahtuma	2016 International Conference Laser Optics, LO 2016 - St. Petersburg, Venäjä Kesto: 27 kesäk. 2016 → 1 heinäk. 2016

Conference

Conference	2016 International Conference Laser Optics, LO 2016
Maa/Alue	Venäjä
Kaupunki	St. Petersburg
Ajanjakso	27/06/16 → 1/07/16

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Pääsy asiakirjaan

10.1109/LO.2016.7549727

Blokhin-LO2016-1.3 μm InAs Quantum Dot Semiconductor Disk Laser
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Accepted author manuscript, 142 KB

http://urn.fi/URN:NBN:fi:tty-201612024842

Muut tiedostot ja linkit

Conference website

Siteeraa tätä

Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Kuzmenkov, A. G., Vasil'Ev, A. P., Maleev, N. A., Dudelev, V. V., Soboleva, K. K., Sokolovskii, G. S., Rantamäki, A., Okhotnikov, O., & Ustinov, V. M. (2016). 1.3 μm InAs quantum dot semiconductor disk laser. R317. Abstraktin lähde: 2016 International Conference Laser Optics, LO 2016, St. Petersburg, Venäjä. https://doi.org/10.1109/LO.2016.7549727

@conference{321bed82b3a44f6f9b7c2ea435755df4,

title = "1.3 μm InAs quantum dot semiconductor disk laser",

abstract = "Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.",

author = "Blokhin, {S. A.} and Bobrov, {M. A.} and Blokhin, {A. A.} and Kuzmenkov, {A. G.} and Vasil'Ev, {A. P.} and Maleev, {N. A.} and Dudelev, {V. V.} and Soboleva, {K. K.} and Sokolovskii, {G. S.} and A. Rantam{\"a}ki and O. Okhotnikov and Ustinov, {V. M.}",

year = "2016",

month = aug,

day = "23",

doi = "10.1109/LO.2016.7549727",

language = "English",

pages = "R317",

note = "2016 International Conference Laser Optics, LO 2016 ; Conference date: 27-06-2016 Through 01-07-2016",

}

Blokhin, SA, Bobrov, MA, Blokhin, AA, Kuzmenkov, AG, Vasil'Ev, AP, Maleev, NA, Dudelev, VV, Soboleva, KK, Sokolovskii, GS, Rantamäki, A, Okhotnikov, O & Ustinov, VM 2016, '1.3 μm InAs quantum dot semiconductor disk laser', 2016 International Conference Laser Optics, LO 2016, St. Petersburg, Venäjä, 27/06/16 - 1/07/16 Sivut R317. https://doi.org/10.1109/LO.2016.7549727

TY - CONF

T1 - 1.3 μm InAs quantum dot semiconductor disk laser

AU - Blokhin, S. A.

AU - Bobrov, M. A.

AU - Blokhin, A. A.

AU - Kuzmenkov, A. G.

AU - Vasil'Ev, A. P.

AU - Maleev, N. A.

AU - Dudelev, V. V.

AU - Soboleva, K. K.

AU - Sokolovskii, G. S.

AU - Rantamäki, A.

AU - Okhotnikov, O.

AU - Ustinov, V. M.

PY - 2016/8/23

Y1 - 2016/8/23

N2 - Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.

AB - Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.

UR - http://www.laseroptics.ru/publications.html

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M3 - Abstract

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T2 - 2016 International Conference Laser Optics, LO 2016

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