Abstrakti
We demonstrate a semiconductor disk laser emitting at 1275nm, employing a wafer fused AlInGaAs/InP-AlAs/GaAs gain mirror. A built-in Au-reflector was used to reflect the pump light not absorbed in a single pass through the gain chip active region. The laser exhibited an output power of 33 W for a pump spot with a diameter of 0.86 mm, an output coupler of 2.5%, and a heat-sink temperature of -5°C. When the temperature of the heat-sink was increased to 15°C, the maximum output power reached a value of ∼24 W. The study reveals that the wafer fused gain mirrors have a high optical quality and good uniformity enabling scaling of the maximum emitted power with the diameter of the pump spot, i.e. at least up to the 1 mm diameter.
Alkuperäiskieli | Englanti |
---|---|
Sivut | 7008-7013 |
Sivumäärä | 6 |
Julkaisu | Optics Express |
Vuosikerta | 25 |
Numero | 6 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 20 maalisk. 2017 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |
Julkaisufoorumi-taso
- Jufo-taso 2
!!ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics