50 W VECSEL emitting at 1180 nm

E. Kantola; T. Leinonen; J.-P. Penttinen; M. Tavast; S. Ranta; M. Guina

50 W VECSEL emitting at 1180 nm

E. Kantola, T. Leinonen, J.-P. Penttinen, M. Tavast, S. Ranta, M. Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.

Alkuperäiskieli	Englanti
Otsikko	2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany
Alaotsikko	CB_3_1
Kustantaja	OSA
ISBN (painettu)	978-1-4673-7475-0
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	EUROPEAN CONFERENCE ON LASERS AND ELECTRO-OPTICS AND THE EUROPEAN QUANTUM ELECTRONICS CONFERENCE - Kesto: 1 tammik. 1900 → …

Conference

Conference	EUROPEAN CONFERENCE ON LASERS AND ELECTRO-OPTICS AND THE EUROPEAN QUANTUM ELECTRONICS CONFERENCE
Lyhennettä	CLEO/Europe-EQEC
Ajanjakso	1/01/00 → …

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@inproceedings{9c7b08da70e1402287ebf14f0accf9c5,

title = "50 W VECSEL emitting at 1180 nm",

abstract = "We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.",

author = "E. Kantola and T. Leinonen and J.-P. Penttinen and M. Tavast and S. Ranta and M. Guina",

year = "2015",

language = "English",

isbn = "978-1-4673-7475-0",

booktitle = "2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany",

publisher = "OSA",

note = "European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, CLEO/Europe-EQEC ; Conference date: 01-01-1900",

}

TY - GEN

T1 - 50 W VECSEL emitting at 1180 nm

AU - Kantola, E.

AU - Leinonen, T.

AU - Penttinen, J.-P.

AU - Tavast, M.

AU - Ranta, S.

AU - Guina, M.

PY - 2015

Y1 - 2015

N2 - We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.

AB - We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.

UR - https://www.osapublishing.org/abstract.cfm?uri=CLEO_Europe-2015-CB_3_1

M3 - Conference contribution

SN - 978-1-4673-7475-0

BT - 2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany

PB - OSA

T2 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference

Y2 - 1 January 1900

ER -

50 W VECSEL emitting at 1180 nm

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