Abstrakti
We present a prototype RF transmitter with an integrated multilevel class-D power amplifier (PA), implemented in 28-nm CMOS. The transmitter utilizes tri-phasing modulation, which combines three constant-envelope phase-modulated signals with coarse amplitude modulation in the PA. This new architecture achieves the back-off efficiency of multilevel outphasing, without linearity-degrading discontinuities in the RF output waveform. Because all signal processing is performed in the time domain up to the PA, the entire system is implemented with digital circuits and structures, thus also enabling the use of synthesis and place-and-route CAD tools for the RF front end. The effectiveness of the digital tri-phasing concept is supported by extensive measurement results. Improved wideband performance is validated through the transmission of orthogonal frequency-division multiplexing (OFDM) bandwidths up to 100 MHz. Enhanced reconfigurability is demonstrated with non-contiguous carrier aggregation and digital carrier generation between 1.5 and 1.9 GHz without a frequency synthesizer. For a 20-MHz 256-QAM OFDM signal at 3.5% error vector magnitude (EVM), the transmitter achieves 22.6-dBm output power and 14.6% PA efficiency. Thanks to the high linearity enabled by tri-phasing, no digital predistortion is needed for the PA.
| Alkuperäiskieli | Englanti |
|---|---|
| Sivut | 1517-1527 |
| Sivumäärä | 11 |
| Julkaisu | IEEE Journal of Solid-State Circuits |
| Vuosikerta | 54 |
| Numero | 6 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - 1 kesäk. 2019 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |
Rahoitus
Manuscript received July 12, 2018; revised December 11, 2018 and February 18, 2019; accepted February 19, 2019. Date of publication March 22, 2019; date of current version May 24, 2019. This paper was approved by Associate Editor Alyosha Molnar. This work was supported in part by Nokia, in part by the Finnish Funding Agency for Technology and Innovation (Tekes), in part by the European Union’s Horizon 2020 Research and Innovation Programme under the Marie Sklodowska-Curie under Grant 704947, and in part by the Academy of Finland. (Corresponding author: Enrico Roverato.) J. Lemberg was with the Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland. He is now with LG Electronics, 20520 Turku, Finland.
Julkaisufoorumi-taso
- Jufo-taso 3
!!ASJC Scopus subject areas
- Electrical and Electronic Engineering
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