A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy

Julkaisun otsikon käännös: A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

Julkaisun otsikon käännös	A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy
Alkuperäiskieli	Englanti
Sivut	593-598
Sivumäärä	6
Julkaisu	Journal of Vacuum Science & Technology B
Vuosikerta	7
Numero	4
Tila	Julkaistu - 1989
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

@article{4332593288ed4aa9a4b5550c5d17e073,

title = "A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy",

author = "J. Lilja and J. Keskinen and M. Hovinen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1989",

language = "English",

volume = "7",

pages = "593--598",

journal = "Journal of Vacuum Science \& Technology B",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy

AU - Lilja, J.

AU - Keskinen, J.

AU - Hovinen, M.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1989

Y1 - 1989

M3 - Article

VL - 7

SP - 593

EP - 598

JO - Journal of Vacuum Science & Technology B

JF - Journal of Vacuum Science & Technology B

IS - 4

ER -