Advanced grid concept with external busbars applied on III‒V multijunction solar cells

Tutkimustuotos: Conference contributionScientificvertaisarvioitu

8 Lataukset (Pure)

Abstrakti

We report on the development of an advanced front contact grid design applied on GaInP/GaAs/GaInNAsSb solar cells. Unlike in a conventional grid pattern, the busbars are placed outside the active area of the solar cell. This enables minimizing the shadowing effect caused by the contact grid pattern as well as reaching smaller-active-area solar cells for concentrated photovoltaics, ultimately leading to higher conversion efficiencies. The quality of the solar cells was characterized by electroluminescence and current-voltage measurements. The concept was proven as a viable option for boosting the performance of multijunction solar cells.
AlkuperäiskieliEnglanti
Otsikko2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
KustantajaIEEE
Sivut951-954
Sivumäärä4
ISBN (elektroninen)978-1-7281-6115-0
ISBN (painettu)978-1-7281-6116-7
DOI - pysyväislinkit
TilaJulkaistu - 5 tammik. 2021
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaIEEE Photovoltaic Specialists Conference -
Kesto: 16 kesäk. 202021 elok. 2020
Konferenssinumero: 47
https://www.ieee-pvsc.org/PVSC47/index.php

Julkaisusarja

NimiConference record of the IEEE Photovoltaic Specialists Conference
ISSN (painettu)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
LyhennettäPVSC
Ajanjakso16/06/2021/08/20
www-osoite

Julkaisufoorumi-taso

  • Jufo-taso 1

!!ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy Engineering and Power Technology

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