Advances in epitaxy of GaAsBi: relation between growth parameters and material properties

Tutkimustuotos: Abstrakti › Tieteellinen

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2017
Tapahtuma	8th International Workshop on Bismuth-Containing Semiconductors - Marburg, Saksa Kesto: 23 heinäk. 2017 → 26 heinäk. 2017

Conference	8th International Workshop on Bismuth-Containing Semiconductors
Maa/Alue	Saksa
Kaupunki	Marburg
Ajanjakso	23/07/17 → 26/07/17

Siteeraa tätä

@conference{7fa3424313cf492c8e55613f0d0c1e26,

title = "Advances in epitaxy of GaAsBi: relation between growth parameters and material properties",

author = "Janne Puustinen and Joonas Hilska and Mircea Guina",

year = "2017",

language = "English",

note = "8th International Workshop on Bismuth-Containing Semiconductors ; Conference date: 23-07-2017 Through 26-07-2017",

}