AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Kostiantyn Nechay; Hermann Kahle; Jussi-Pekka Penttinen; Patrik Rajala; Antti Tukiainen; Sanna Ranta; Mircea Guina

doi:10.1109/LPT.2019.2924289

AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Kostiantyn Nechay, Hermann Kahle, Jussi-Pekka Penttinen, Patrik Rajala, Antti Tukiainen, Sanna Ranta, Mircea Guina

Fysiikka

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

11 Sitaatiot (Scopus)

Abstrakti

An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

Alkuperäiskieli	Englanti
Sivut	1245-1248
Sivumäärä	4
Julkaisu	IEEE Photonics Technology Letters
Vuosikerta	31
Numero	15
DOI - pysyväislinkit	https://doi.org/10.1109/LPT.2019.2924289
Tila	Julkaistu - 1 elok. 2019
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 2

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1109/LPT.2019.2924289

Siteeraa tätä

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title = "AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm",

abstract = "An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.",

keywords = "AlGaAs, AlGaInP, quantum well lasers, semiconductor disk lasers, semiconductor growth, semiconductor laser, vertical-external-cavity surface-emitting lasers (VECSELs)",

author = "Kostiantyn Nechay and Hermann Kahle and Jussi-Pekka Penttinen and Patrik Rajala and Antti Tukiainen and Sanna Ranta and Mircea Guina",

note = "INT=phys,{"}Rajala, Patrik{"}",

year = "2019",

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day = "1",

doi = "10.1109/LPT.2019.2924289",

language = "English",

volume = "31",

pages = "1245--1248",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

AU - Nechay, Kostiantyn

AU - Kahle, Hermann

AU - Penttinen, Jussi-Pekka

AU - Rajala, Patrik

AU - Tukiainen, Antti

AU - Ranta, Sanna

AU - Guina, Mircea

N1 - INT=phys,"Rajala, Patrik"

PY - 2019/8/1

Y1 - 2019/8/1

N2 - An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

AB - An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

KW - AlGaAs

KW - AlGaInP

KW - quantum well lasers

KW - semiconductor disk lasers

KW - semiconductor growth

KW - semiconductor laser

KW - vertical-external-cavity surface-emitting lasers (VECSELs)

U2 - 10.1109/LPT.2019.2924289

DO - 10.1109/LPT.2019.2924289

M3 - Article

AN - SCOPUS:85069529749

SN - 1041-1135

VL - 31

SP - 1245

EP - 1248

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

ER -

AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä