An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

J. Pakarinen; V. Polojärvi; P. Laukkanen; A. Tukiainen; A. Laakso; C.S. Peng; P. Tuomisto; V.-M. Korpijärvi; J. Puustinen; M. Pessa

doi:10.1016/j.apsusc.2008.08.062

An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

Julkaisun otsikon käännös: An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

J. Pakarinen, V. Polojärvi, P. Laukkanen, A. Tukiainen, A. Laakso, C.S. Peng, P. Tuomisto, V.-M. Korpijärvi, J. Puustinen, M. Pessa

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Julkaisun otsikon käännös	An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study
Alkuperäiskieli	Englanti
Sivut	2985-2988
Julkaisu	Applied Surface Science
Vuosikerta	255
Numero	5, part 2
DOI - pysyväislinkit	https://doi.org/10.1016/j.apsusc.2008.08.062
Tila	Julkaistu - 2008
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 2

Pääsy asiakirjaan

10.1016/j.apsusc.2008.08.062

Siteeraa tätä

Pakarinen, J., Polojärvi, V., Laukkanen, P., Tukiainen, A., Laakso, A., Peng, C. S., Tuomisto, P., Korpijärvi, V-M., Puustinen, J., & Pessa, M. (2008). An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study. Applied Surface Science, 255(5, part 2), 2985-2988. https://doi.org/10.1016/j.apsusc.2008.08.062

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title = "An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study",

author = "J. Pakarinen and V. Poloj{\"a}rvi and P. Laukkanen and A. Tukiainen and A. Laakso and C.S. Peng and P. Tuomisto and V.-M. Korpij{\"a}rvi and J. Puustinen and M. Pessa",

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doi = "10.1016/j.apsusc.2008.08.062",

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Pakarinen, J, Polojärvi, V, Laukkanen, P, Tukiainen, A, Laakso, A, Peng, CS, Tuomisto, P, Korpijärvi, V-M, Puustinen, J & Pessa, M 2008, 'An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study', Applied Surface Science, Vuosikerta 255, Nro 5, part 2, Sivut 2985-2988. https://doi.org/10.1016/j.apsusc.2008.08.062

TY - JOUR

T1 - An effect of As flux on GaAs/AIAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

AU - Pakarinen, J.

AU - Polojärvi, V.

AU - Laukkanen, P.

AU - Tukiainen, A.

AU - Laakso, A.

AU - Peng, C.S.

AU - Tuomisto, P.

AU - Korpijärvi, V.-M.

AU - Puustinen, J.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2008

Y1 - 2008

U2 - 10.1016/j.apsusc.2008.08.062

DO - 10.1016/j.apsusc.2008.08.062

M3 - Article

VL - 255

SP - 2985

EP - 2988

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 5, part 2

ER -