Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Al Sameen T. Khan; Paul R. Berger; Fernando J. Guarin; Subramanian S. Iyer

doi:10.1063/1.116437

Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Al Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, Subramanian S. Iyer

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

15 Sitaatiot (Scopus)

Abstrakti

Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

Alkuperäiskieli	Englanti
Sivut	3105-3107
Sivumäärä	3
Julkaisu	Applied Physics Letters
Vuosikerta	68
Numero	22
DOI - pysyväislinkit	https://doi.org/10.1063/1.116437
Tila	Julkaistu - 1996
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

!!ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.116437

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title = "Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy",

abstract = "Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.",

author = "Khan, {Al Sameen T.} and Berger, {Paul R.} and Guarin, {Fernando J.} and Iyer, {Subramanian S.}",

year = "1996",

doi = "10.1063/1.116437",

language = "English",

volume = "68",

pages = "3105--3107",

journal = "Applied Physics Letters",

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number = "22",

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TY - JOUR

T1 - Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

AU - Khan, Al Sameen T.

AU - Berger, Paul R.

AU - Guarin, Fernando J.

AU - Iyer, Subramanian S.

PY - 1996

Y1 - 1996

N2 - Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

AB - Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

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U2 - 10.1063/1.116437

DO - 10.1063/1.116437

M3 - Article

AN - SCOPUS:0347039385

SN - 0003-6951

VL - 68

SP - 3105

EP - 3107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

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