Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Capucine Tong; Thomas Bidaud; Eero Koivusalo; Marcelo Rizzo Piton; Mircea Guina; Helder Vinicius Avanço Galeti; Yara Galvão Gobato; Andrea Cattoni; Teemu Hakkarainen; Stéphane Collin

doi:10.1088/1361-6528/ac4d58

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Andrea Cattoni, Teemu Hakkarainen, Stéphane Collin

Fysiikka

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

2 Sitaatiot (Scopus)

4 Lataukset (Pure)

Abstrakti

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

Alkuperäiskieli	Englanti
Sivumäärä	13
Julkaisu	Nanotechnology
Vuosikerta	33
Numero	18
DOI - pysyväislinkit	https://doi.org/10.1088/1361-6528/ac4d58
Tila	Julkaistu - 10 helmik. 2022
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 2

!!ASJC Scopus subject areas

Bioengineering
Yleinen kemia
Yleinen materiaalitiede
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1088/1361-6528/ac4d58

Cathodoluminescence_mapping_of_electron_concentrationAccepted author manuscript, 7,34 MBLisenssi: CC BY-NC-ND

https://urn.fi/URN:NBN:fi:tuni-202212098999Lisenssi: CC BY-NC-ND

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@article{6933365ddbbb4229a0a559a76b39ab02,

title = "Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires",

abstract = "Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.",

keywords = "cathodoluminescence, doping, electron concentrations, GaAs, MBE, nanowires",

author = "Capucine Tong and Thomas Bidaud and Eero Koivusalo and {Rizzo Piton}, Marcelo and Mircea Guina and Galeti, {Helder Vinicius Avan{\c c}o} and {Galv{\~a}o Gobato}, Yara and Andrea Cattoni and Teemu Hakkarainen and St{\'e}phane Collin",

note = "Publisher Copyright: {\textcopyright} 2022 IOP Publishing Ltd.",

year = "2022",

month = feb,

day = "10",

doi = "10.1088/1361-6528/ac4d58",

language = "English",

volume = "33",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "18",

}

TY - JOUR

T1 - Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

AU - Tong, Capucine

AU - Bidaud, Thomas

AU - Koivusalo, Eero

AU - Rizzo Piton, Marcelo

AU - Guina, Mircea

AU - Galeti, Helder Vinicius Avanço

AU - Galvão Gobato, Yara

AU - Cattoni, Andrea

AU - Hakkarainen, Teemu

AU - Collin, Stéphane

PY - 2022/2/10

Y1 - 2022/2/10

N2 - Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

AB - Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

KW - cathodoluminescence

KW - doping

KW - electron concentrations

KW - GaAs

KW - MBE

KW - nanowires

U2 - 10.1088/1361-6528/ac4d58

DO - 10.1088/1361-6528/ac4d58

M3 - Article

C2 - 35051915

AN - SCOPUS:85124498499

SN - 0957-4484

VL - 33

JO - Nanotechnology

JF - Nanotechnology

IS - 18

ER -

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

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